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MBRF20100CT-M3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTTKY 100V ITO220AB. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for MBRF20100CT-M3/4W
- Description：DIODE ARR SCHOTTKY 100V ITO220AB
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：800 mV @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：100 µA @ 100 V
- Operating Temperature - Junction：-65°C ~ 150°C
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package：ITO-220AB
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for MBRF20100CT-M3/4W
Diode Arrays Overview
The MBRF20100CT-M3/4W is a dual common-cathode high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It utilizes TMBS technology to achieve low forward voltage drop and high efficiency. The device features a maximum average forward rectified current of 20 A per diode at a case temperature of 133 °C, with a peak forward surge current capability of 150 A. The maximum repetitive peak reverse voltage is rated at 100 V. Operating junction and storage temperatures range from -65 °C to +150 °C.
Diode Arrays Feature Summary
- Trench MOS Schottky technology for lower power losses and high efficiency
- Low forward voltage drop characteristics
- High forward surge current capability
- Suitable for high frequency operation
Diode Arrays Applications
- High frequency rectification in switching mode power supplies
- Freewheeling diodes in DC/DC converters
- Polarity protection applications
Diode Arrays Procurement Notes
Verify the specific ordering suffix /4W corresponds to the tube delivery mode containing 50 units per tube as documented in the official datasheet. Confirm that the M3 suffix indicates compliance with halogen-free requirements, RoHS standards, and JESD 201 class 1A whisker testing criteria before finalizing procurement specifications.
Diode Arrays Selection Notes
Select this component when designing circuits requiring dual common-cathode configurations with high voltage ratings up to 100 V. Ensure thermal management strategies account for the specified maximum operating junction temperature of 150 °C and the typical thermal resistance of 3.5 °C/W per diode to maintain optimal performance under load conditions.
Diode Arrays Part Context
This part belongs to the MBRF2090CT and MBRF20100CT series of dual high-voltage Trench MOS Barrier Schottky Rectifiers. These devices are designed for use in ITO-220AB packages, providing isolated base terminals suitable for heatsink mounting. The series emphasizes reliability through guard ring overvoltage protection and majority carrier conduction mechanisms.
Diode Arrays Replacement Considerations
MBRF2090CT-M3/4W
Diode Arrays FAQ
What is the maximum repetitive peak reverse voltage rating?
The maximum repetitive peak reverse voltage (VRRM) is 100 V.
How is the polarity marked on the device?
The polarity is indicated as marked on the physical component casing.
What is the solder bath temperature limit?
The maximum solder bath temperature is 275 °C for a duration of 10 seconds, per JESD 22-B106.
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