MBRF25H60CT-E3/45

Diode Arrays Overview

The MBRF25H60CT-E3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes High Barrier Technology for improved high-temperature performance and features a TO-220AB package with an insulated thermal option (ITO-220AB). The device supports a maximum repetitive peak reverse voltage of 60 V and a total average forward rectified current of 30 A, providing 15 A per diode. Key electrical characteristics include a maximum instantaneous forward voltage of 0.72 V at 30 A and 125 °C, and a maximum reverse current of 20 mA at 125 °C. The component operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

• High Barrier Technology ensures lower power losses and high efficiency.
• Guardring structure provides overvoltage protection capabilities.
• Low leakage current contributes to improved high-temperature performance.
• AEC-Q101 qualified for automotive reliability standards.

Diode Arrays Applications

• Low voltage, high frequency rectification in switching mode power supplies
• Freewheeling diodes in DC/DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The E3 suffix indicates RoHS compliance and commercial grade status, while HE3 denotes AEC-Q101 qualification. Confirm that the ITO-220AB package variant meets isolation voltage needs, as standard TO-220AB lacks the specified 1500 VAC isolation from terminal to heatsink. Ensure procurement channels source directly from authorized distributors to guarantee authenticity.

Diode Arrays Selection Notes

Select this component when designing systems requiring low forward voltage drop and high surge capability. The ITO-220AB package offers electrical isolation between the terminal and heatsink, suitable for applications where grounding the heatsink is not feasible. Verify thermal resistance values against system cooling requirements, noting the higher junction-to-case thermal resistance compared to standard packages. Consider the 150 A peak forward surge current rating for transient load handling.

Diode Arrays Part Context

This part belongs to the MBR25HxxCT family of dual common cathode Schottky rectifiers. The 'F' in the model number designates the ITO-220AB insulated case variant. Other variants in the series include MBR25HxxCT (TO-220AB) and MBRB25HxxCT (TO-263AB). The series covers reverse voltages ranging from 35 V to 60 V, sharing identical current ratings and thermal characteristics across the different package options.

Diode Arrays Replacement Considerations

Vishay recommends MBRF25H60CTHE3/45 as a direct substitute for automotive-grade applications requiring AEC-Q101 qualification. Cross-manufacturer replacements must match the 60 V reverse voltage, 15 A per diode current rating, and TO-220AB or ITO-220AB package dimensions. Verify that alternative components meet the same thermal resistance and surge current specifications.

Diode Arrays FAQ

What is the isolation voltage for the MBRF25H60CT-E3/45?

The ITO-220AB package provides an isolation voltage of 1500 VAC from terminal to heatsink for one minute.

How does the E3 suffix differ from HE3 in this series?

The E3 suffix indicates RoHS-compliant commercial grade material categorization, while the HE3 suffix indicates RoHS-compliant material that is also AEC-Q101 qualified.

What is the maximum non-repetitive avalanche energy rating?

The maximum non-repetitive avalanche energy per diode is 80 mJ at 25 °C with an IAS of 4 A and L of 10 mH.