Diode Arrays MBRF30H35CT-E3/45 product image

MBRF30H35CT-E3/45

  • Description:DIODE ARR SCHOTTKY 100V ITO220AB
  • Series:-

SKU:8b108306d28a Category: Brand:

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MBRF30H35CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTTKY 100V ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRF30H35CT-E3/45

  • Description:DIODE ARR SCHOTTKY 100V ITO220AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:820 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRF30H35CT-E3/45

MBRF30H35CT-E3/45

Diode Arrays Overview

The MBRF30H35CT-E3/45 is a dual common cathode Schottky rectifier from Vishay General Semiconductor, utilizing high barrier technology for improved high-temperature performance. It features an ITO-220AB package with a maximum repetitive peak reverse voltage of 35 V and a total maximum average forward rectified current of 30 A (15 A per diode). The device offers a low forward voltage drop ranging from 0.56 V to 0.68 V depending on temperature and current conditions, alongside a maximum reverse leakage current of 80 μA at 25 °C. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

  • High barrier technology construction designed to enhance thermal stability and high-temperature operational reliability.
  • Guardring structure incorporated to provide protection against overvoltage events during operation.
  • Low forward voltage drop characteristic contributes to reduced power losses and increased system efficiency.
  • AEC-Q101 qualified status ensures compliance with automotive electronics component standards.

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converter circuits
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix E3/45 to confirm the tube packaging format and commercial grade RoHS compliance. Confirm that the ITO-220AB package variant matches the required footprint for the target PCB design. Ensure the 35 V rating aligns with the circuit's peak reverse voltage requirements before finalizing procurement.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for synchronous rectification or freewheeling duties. The ITO-220AB package provides isolation voltage capabilities suitable for heatsink mounting. Consider the thermal resistance characteristics and derating curves to ensure adequate heat dissipation under continuous load conditions.

Diode Arrays Part Context

This part belongs to the MBR30HxxCT family of dual Schottky rectifiers manufactured by Vishay General Semiconductor. The series includes variants with different voltage ratings such as 45 V, 50 V, and 60 V. The MBRF prefix specifically denotes the insulated leaded TO-220AB package, distinguishing it from standard TO-220AB and surface mount TO-263AB counterparts.

Diode Arrays Replacement Considerations

  • MBRF30H45CT-E3/45
  • MBRF30H50CT-E3/45
  • MBRF30H60CT-E3/45

Diode Arrays FAQ

What is the isolation voltage capability of the MBRF30H35CT-E3/45?

The ITO-220AB package provides an isolation voltage of 1500 VAC from terminal to heatsink when tested for one minute.

Does the MBRF30H35CT-E3/45 meet automotive qualification standards?

Yes, the device is AEC-Q101 qualified, making it suitable for automotive electronic applications.

What is the maximum non-repetitive avalanche energy rating?

The device can withstand a non-repetitive avalanche energy of 80 mJ per diode at 25 °C with an inductance of 10 mH and current of 4 A.

MBRF30H35CT-E3/45MBRF30H35CT-E3/45

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