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MBRF30H60CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 60V 15A ITO220AB. Review the specifications below when checking this part for your BOM.
The MBRF30H60CT-E3/45 is a dual common cathode Schottky rectifier utilizing Vishay's High Barrier Technology. It features an ITO-220AB surface-mount package with a maximum repetitive peak reverse voltage of 60 V and a total average forward rectified current of 30 A (15 A per diode). The device exhibits a low forward voltage drop, ranging from 0.56 V to 0.71 V depending on temperature and current conditions, alongside a maximum reverse leakage current of 80 μA at 25 °C. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 °C to +175 °C.
Verify the specific suffix E3 against official documentation to confirm RoHS compliance and commercial grade status. Confirm that the ITO-220AB package designation matches the required footprint for PCB layout. Ensure the 60 V rating aligns with the circuit's peak reverse voltage requirements. Check for any recent Product Change Notifications or End-of-Life notices directly from the manufacturer before finalizing procurement plans.
Select this component when a surface-mount solution is preferred over through-hole alternatives like the MBR30H60CT. The ITO-220AB package offers distinct thermal resistance characteristics compared to standard TO-220AB cases. Consider the 15 A per diode limit when designing for continuous operation. Verify that the 60 V blocking voltage meets the application's safety margins without excessive derating.
This part belongs to the MBR30HxxCT family of dual common cathode Schottky rectifiers manufactured by Vishay General Semiconductor. The 'F' in the model number specifically denotes the ITO-220AB surface-mount package variant. This series utilizes High Barrier Technology to achieve superior thermal stability and reduced forward voltage drops compared to standard Schottky devices.
Publicly confirmed substitute part numbers are not available in the provided source material.
The typical thermal resistance junction-to-case per diode is 4.5 °C/W for the MBRF series.
Yes, the device is qualified according to the AEC-Q101 standard.
The maximum non-repetitive peak forward surge current is 150 A for an 8.3 ms single half sine-wave superimposed on rated load.
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