MBRF400150R

Diode Arrays Overview

The MBRF400150R is a silicon Schottky diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation. The device has a repetitive reverse voltage of 150V and a forward current rating of 400A. The typical forward voltage is 880mV, and the maximum reverse leakage current is 1mA at 150V. It operates within a temperature range of -55°C to +150°C.

Diode Arrays Feature Summary

• Utilizes silicon Schottky technology for low forward voltage drop and high efficiency.
• Designed in a robust Twin Tower package suitable for high-current applications.
• Features screw mount configuration for secure mechanical attachment.

Diode Arrays Applications

• High-power DC-DC converters
• Free-wheeling rectification in motor drives
• Industrial power supply units

Diode Arrays Procurement Notes

Verify the specific manufacturer source, as some listings may attribute this part to Navitas Semiconductor due to corporate acquisition history. Confirm the exact package variant and pinout compatibility with your heatsink design before ordering. Ensure the component meets RoHS compliance requirements for your region. Check for any end-of-life notifications or obsolescence warnings from the original manufacturer.

Diode Arrays Selection Notes

Select this module when high current handling up to 400A is required alongside a 150V blocking capability. The Twin Tower form factor facilitates efficient thermal management through direct mounting. Compare forward voltage characteristics against alternative Schottky modules to optimize system efficiency. Ensure the operating junction temperature remains within the specified -55°C to +150°C range for reliable performance.

Diode Arrays Part Context

This component belongs to the GeneSiC Semiconductor MBR series of silicon Schottky diode modules. These modules are engineered for high-reliability power electronics applications requiring fast switching and low conduction losses. The Twin Tower packaging allows for compact integration into high-density power systems while maintaining robust electrical isolation and thermal conductivity.