MBRS10H200CTH

Diode Arrays Overview

The MBRS10H200CTH is a Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a dual common cathode configuration housed in a TO-220AB package for through-hole mounting. The device is rated for a continuous forward current of 10 A and a maximum repetitive peak reverse voltage of 200 V. Key electrical characteristics include a typical forward voltage of 0.94 V at 10 A, a maximum non-repetitive peak forward surge current of 150 A, and a maximum reverse leakage current of 5 uA. It operates within a temperature range of -65°C to +175°C.

Diode Arrays Feature Summary

• Utilizes metal-silicon junction technology for majority carrier conduction, ensuring low power loss and high efficiency.
• Features plastic encapsulation with Underwriters Laboratory classification (94V-0) for safety compliance.
• Designed for high-temperature operation with an extended junction temperature range up to 175°C.

Diode Arrays Applications

• Free-wheeling diodes in DC-DC converters
• Power supply rectification circuits
• Inverter and chopper circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'H' against official Taiwan Semiconductor documentation to confirm if it denotes a specific tape-and-reel packaging variant or a distinct mechanical specification compared to standard tube-packaged equivalents. Ensure the component matches the required RoHS compliance status and lead-free finish requirements for your assembly process.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for medium-power applications. The 10 A rating and 200 V breakdown voltage make it suitable for general-purpose power conversion. Consider the TO-220AB package for ease of heatsinking in through-hole designs where surface-mount alternatives are not feasible.

Diode Arrays Part Context

This part belongs to the MBR series of Schottky Barrier Rectifiers from Taiwan Semiconductor. The series is characterized by its use of silicon planar technology and metal-silicon junctions. These devices are engineered to provide high efficiency and fast switching speeds, making them a standard choice for improving performance in various power electronic systems.

Diode Arrays Replacement Considerations

Cross-reference with Vishay MBR20H200CT or onsemi MBRB20H200CTT4G only if current ratings and packages align. Verify that substitute parts meet the same thermal and electrical specifications before implementation.