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MBRT12020 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 20V 60A 3TOWER. Review the specifications below when checking this part for your BOM.
The MBRT12020 is a silicon power Schottky diode module from the MBRT120 series, manufactured by GeneSiC Semiconductor. It features a Three Tower package with an electrically isolated base plate and screw mount installation. The device supports a repetitive peak reverse voltage of 20 V and an average forward current of 120 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 0.70 V at Tj = 25 °C and a peak forward surge current of 800 A for an 8.3 ms half-sine pulse. The junction-to-case thermal resistance is 0.80 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.
Verify the specific part number suffix against official documentation to confirm terminal configuration, as 'R' variants feature reversed leads. Confirm RoHS compliance status through the manufacturer's latest datasheet or product specification sheet before procurement. Ensure the supplier provides valid traceability documents for quality assurance purposes.
Select this component when a low forward voltage drop and high current capacity are required in a thermally efficient package. The isolated base plate simplifies heatsinking without additional insulators. Verify that the system's reverse voltage requirements do not exceed the 20 V rating under all operating transients.
This module belongs to the MBRT120 series of silicon Schottky diodes. The series includes variants with different reverse voltage ratings, such as the MBRT12030 and MBRT12040. All models share the same Three Tower package form factor and thermal characteristics, allowing for design flexibility within the same mechanical footprint.
Direct replacements must match the 120 A current rating, 20 V reverse voltage, and Three Tower package dimensions. Verify that substitute modules maintain equivalent thermal resistance and forward voltage characteristics to ensure system performance compatibility.
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