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MBRT200200 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 100A 3TOWER. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for MBRT200200
- Description：DIODE MOD SCHOT 200V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：920 mV @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for MBRT200200
Diode Arrays Overview
The GeneSiC Semiconductor MBRT200200 is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 200 A per package. It utilizes a Three Tower package with an electrically isolated base plate, offering high surge capability and non-ESD sensitivity. The device supports junction temperatures from -55°C to 150°C, with a thermal resistance of 0.45 °C/W per leg.
Diode Arrays Feature Summary
- Features an electrically isolated base plate within a Three Tower package design
- Provides high surge capability for robust power handling
- Constructed as a non-ESD sensitive component
Diode Arrays Applications
- High-frequency switching power supplies
- DC-DC converter circuits
- Free-wheeling rectification in motor drives
Diode Arrays Procurement Notes
Verify the specific suffix designation against official documentation to confirm terminal configuration details. Confirm that the requested unit matches the standard manufacturing specifications for the MBRT200200 series. Ensure compatibility with mounting hardware requirements for the Three Tower package style before finalizing orders.
Diode Arrays Selection Notes
Select this component when a 200 V blocking voltage and 200 A continuous current rating are required. The low forward voltage drop characteristics make it suitable for high-efficiency applications. Consider the thermal resistance value for heat sink sizing calculations to maintain safe operating junction temperatures under load.
Diode Arrays Part Context
This module belongs to the MBRT200 series of silicon Schottky rectifiers manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings, such as the 150 V version, sharing similar physical packaging and electrical performance profiles for high-current applications.
Diode Arrays Replacement Considerations
Cross-reference with other manufacturers' Three Tower Schottky modules rated at 200V/200A. Verify pinout orientation and thermal interface dimensions to ensure mechanical fit without redesigning the PCB or heatsink assembly.
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