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MBRT20035 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 100A 3TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor MBRT20035 is a silicon power Schottky diode module rated for an average forward current of 200 A per package. It features a repetitive peak reverse voltage (VRRM) of 35 V and a maximum instantaneous forward voltage of 0.70 V at Tj = 100 °C. The device utilizes a Three Tower package with an electrically isolated base plate, offering a thermal resistance from junction to case of 0.45 °C/W per leg. It supports an operating temperature range from -55 °C to +150 °C and provides a peak forward surge current capability of 1500 A.
Verify the specific suffix designation against official documentation to confirm terminal configuration, as 'R' variants feature reversed leads. Confirm RoHS compliance status through the manufacturer's latest product compliance reports before finalizing procurement specifications.
Select this component when a 35 V blocking voltage and 200 A continuous current rating are required. Ensure the application environment allows for adequate heat sinking to maintain junction temperatures within the specified -55 °C to +150 °C operational range during continuous operation.
This module belongs to the MBRT200 series, which includes ratings from 20 V to 40 V. All variants share identical thermal characteristics and package dimensions, differing primarily in their reverse voltage blocking capabilities while maintaining consistent forward current handling.
MBRT20030R
The thermal resistance from junction to case is 0.45 °C/W per leg.
No, the device is not ESD sensitive according to the datasheet specifications.
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