MBRT400150R

Diode Arrays Overview

The GeneSiC Semiconductor MBRT400150R is a silicon power Schottky diode module featuring a Three Tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 150 V and an average forward current rating of 400 A per package. The device operates within a junction temperature range of -55 °C to +150 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 0.88 V at 200 A and a thermal resistance from junction to case of 0.35 °C/W per leg. The component exhibits high surge capability with a peak forward surge current of 3000 A.

Diode Arrays Feature Summary

• Features an electrically isolated base plate for enhanced safety in grounded applications
• Designed with a Three Tower package structure to support high surge current capabilities
• Constructed as a non-ESD sensitive silicon power Schottky diode module

Diode Arrays Applications

• High-frequency DC-DC converters requiring low forward voltage drop
• Free-wheeling rectification in motor drive circuits
• Power supply output rectification in industrial equipment

Diode Arrays Procurement Notes

Verify the specific suffix designation against the manufacturer datasheet to confirm terminal configuration, as the 'R' variant indicates reversed leads compared to standard versions. Confirm that the required reverse voltage rating aligns with the 150 V specification rather than higher variants in the series. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this module when applications demand high average current handling combined with low conduction losses typical of Schottky technology. The isolated base plate design facilitates mounting on insulated heat sinks without additional insulating hardware. Consider the thermal resistance parameters for heatsink sizing calculations to maintain junction temperatures within the specified operational limits during continuous load cycles.

Diode Arrays Part Context

This component belongs to the MBRT400 series of silicon power Schottky diode modules manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings ranging from 150 V to 200 V, all sharing similar current ratings and package dimensions. The Three Tower packaging style is consistent across the family, providing standardized mechanical interfaces for power electronics designers.

Diode Arrays Replacement Considerations

Direct replacements must match the 150 V reverse voltage, 400 A current rating, and Three Tower package footprint. Verify lead orientation compatibility, as the 'R' suffix denotes reversed terminals which may not be interchangeable with standard pinouts without PCB modification.