MBRT40035L

$37.40

Description：DIODE MOD SCHOTT 35V 200A 3TOWER
Series：-

SKU:67334b468939 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBRT40035L is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 200A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT40035L

Description：DIODE MOD SCHOTT 35V 200A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：35 V
Current - Average Rectified (Io) (per Diode)：200A
Voltage - Forward (Vf) (Max) @ If：600 mV @ 200 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：3 mA @ 35 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBRT40035L

MBRT40035L

Diode Arrays Overview

The MBRT40035L is a low forward voltage silicon power Schottky diode manufactured by GeneSiC Semiconductor. It features a common cathode configuration with two elements housed in an electrically isolated three tower package. The device supports a repetitive peak reverse voltage of 35 V and a maximum average forward current of 200 A. It is designed for high surge capability applications, operating within a junction temperature range of -55 °C to 150 °C.

Diode Arrays Feature Summary

Low forward voltage design for enhanced efficiency
Electrically isolated base plate for safety
High surge current handling capability

Diode Arrays Applications

DC-DC converters
Free-wheeling rectification
Power factor correction circuits

Diode Arrays Procurement Notes

Verify the specific manufacturer designation, as documentation may reference Navitas Semiconductor due to corporate acquisition history. Confirm the package type matches the required chassis mounting specifications. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the datasheet revision date to confirm electrical characteristics align with your design parameters.

Diode Arrays Selection Notes

Select this component when low forward voltage drop is critical for system efficiency at 200 A loads. The isolated three tower package facilitates direct chassis mounting for thermal management. Consider the 35 V rating to ensure adequate headroom against transient voltages in the target circuit topology.

Diode Arrays Part Context

This part belongs to the MBRT400 series of silicon power Schottky diodes from GeneSiC. The series utilizes a robust three tower package architecture designed for high-current industrial applications. These devices are engineered to provide reliable performance in demanding power conversion environments requiring fast switching and high thermal stability.