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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 80V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：80 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：880 mV @ 200 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 20 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MBRT40080R is a silicon power Schottky diode module featuring a three-tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 80 V and an average forward current rating of 400 A per package. The device supports junction temperatures from -55 °C to +150 °C, with a maximum thermal resistance of 0.35 °C/W per leg. It exhibits a maximum instantaneous forward voltage of 0.84 V at 200 A and a peak forward surge current capability of 3000 A.
Feature Summary
- High surge current capability for robust transient handling
- Electrically isolated base plate for safety and mounting flexibility
- Three tower package design for high current density
Applications
- Industrial motor drives
- DC-DC converters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix designation against official documentation to confirm terminal configuration, as 'R' variants feature reversed leads. Confirm RoHS compliance status through manufacturer datasheets prior to integration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance limits for reliable operation.
Selection Notes
Select this component for applications requiring high average current and low forward voltage drop in isolated configurations. Evaluate thermal performance based on the 0.35 °C/W junction-to-case resistance. Consider the 3000 A surge rating for systems experiencing significant inrush currents or fault conditions during startup.
Part Context
This module belongs to the MBRT400 series, which covers voltage ratings from 45 V to 100 V. The series utilizes silicon technology and is designed for high-power switching applications. The three-tower architecture allows for efficient heat dissipation and compact system integration compared to discrete component solutions.
Replacement Considerations
Cross-reference with other MBRT400 series variants such as MBRT40060R or MBRT400100R if voltage requirements differ. Verify pinout compatibility when substituting non-R versions due to potential lead reversal differences.
