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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 35V 250A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：35 V
- Current - Average Rectified (Io) (per Diode)：250A
- Voltage - Forward (Vf) (Max) @ If：750 mV @ 250 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 20 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MBRT50035R is a silicon power Schottky diode module featuring a three-tower package with an electrically isolated base plate. It supports a repetitive peak reverse voltage of 35 V and delivers an average forward current of 500 A per package. The device exhibits a maximum instantaneous forward voltage of 0.75 V per leg and a junction-to-case thermal resistance of 0.30 °C/W. It operates within a temperature range of -55 °C to +150 °C and withstands a peak forward surge current of 3500 A.
Feature Summary
- High surge capability designed for demanding power applications
- Electrically isolated base plate for enhanced safety and mounting flexibility
- Not ESD sensitive, simplifying handling procedures
Applications
- High-current DC-DC converters
- Free-wheeling rectification in motor drives
- Power factor correction circuits
Procurement Notes
Verify the specific suffix designation against official documentation to confirm terminal configuration details. Confirm RoHS compliance status and any regional shipping restrictions prior to ordering. Ensure thermal management solutions align with the specified junction-to-case thermal resistance requirements for reliable operation.
Selection Notes
Select this component when high average current capacity and low forward voltage drop are required in a compact isolated package. Consider the 35 V reverse voltage rating relative to system bus voltages. Evaluate thermal performance based on the 0.30 °C/W junction-to-case resistance under expected operating conditions.
Part Context
This part belongs to the MBRT500 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 20 V to 40 V while maintaining consistent current handling capabilities. The three-tower package design facilitates efficient heat dissipation and robust mechanical mounting in industrial power electronics.
Replacement Considerations
Cross-reference with MBRT50030R or MBRT50040R if voltage ratings differ slightly. Verify pinout compatibility as the 'R' suffix indicates reversed leads compared to standard versions. Ensure thermal interface materials match the isolated base plate characteristics.
