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MBRT50080 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 250A 3TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor MBRT50080 is a silicon power Schottky diode module rated for an average forward current of 500 A and a repetitive peak reverse voltage of 80 V. It utilizes a three-tower package with an electrically isolated base plate, ensuring component isolation. The device supports junction temperatures from -55 °C to +150 °C and features a maximum thermal resistance of 0.30 °C/W per leg. Key electrical parameters include a maximum instantaneous forward voltage of 0.84 V and a peak forward surge current of 3500 A.
Verify the specific suffix designation against official documentation to confirm terminal lead configurations, as reversed leads may apply to certain variants within this series. Confirm RoHS compliance status through manufacturer datasheets prior to integration. Ensure thermal interface materials are compatible with the specified operating temperature range to maintain optimal heat dissipation performance.
Select this module for applications requiring high current handling and low forward voltage drop at elevated temperatures. The isolated base plate simplifies heatsinking requirements by eliminating the need for additional insulating hardware. Evaluate thermal management strategies based on the 0.30 °C/W junction-to-case resistance to ensure reliable operation under continuous load conditions.
This component belongs to the MBRT500 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings ranging from 45 V to 100 V, all sharing common structural characteristics such as the three-tower package and high surge capabilities. This specific model represents the 80 V variant within that standardized product line.
MBRT50080R
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