MBRT600150

MBRT600150

$99.37
  • Description:DIODE MOD SCHOT 150V 300A 3TOWER
  • Series:-

SKU:51a1701abccd Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD SCHOT 150V 300A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 150 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRT600150

Overview

The GeneSiC Semiconductor MBRT600150 is a silicon power Schottky diode module featuring a three-tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 150 V and supports an average forward current of 600 A per package. The device exhibits a maximum instantaneous forward voltage of 0.88 V at 25 °C and operates within a junction temperature range of -55 to 150 °C. Key electrical characteristics include a thermal resistance of 0.28 °C/W per leg and a peak forward surge current capability of 4000 A.

Feature Summary

  • High surge current capability designed for demanding transient loads
  • Electrically isolated base plate providing safety isolation
  • Three tower package structure for efficient mounting

Applications

  • DC/DC converters
  • Free-wheeling rectification in motor drives
  • Power factor correction circuits

Procurement Notes

Verify the specific suffix designation, as the datasheet indicates that devices marked with 'R' possess reversed leads compared to standard configurations. Confirm terminal orientation matches the circuit board layout before installation. Ensure the component meets RoHS compliance requirements if applicable to the assembly process. Cross-reference the manufacturer part number against official GeneSiC documentation to validate authenticity and specifications.

Selection Notes

Select this module when high average current handling and low forward voltage drop are required in a compact form factor. The isolated base plate simplifies heatsinking strategies by eliminating the need for additional insulating hardware. Consider the thermal resistance value for calculating junction temperatures under continuous load conditions. Evaluate the surge current rating against potential inrush currents in the target application environment.

Part Context

This component belongs to the MBRT600 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series utilizes a robust three-tower package design optimized for high-current applications. These modules are engineered to provide reliable performance in industrial power conversion systems where efficiency and thermal management are critical factors.

Replacement Considerations

Consult official GeneSiC documentation for verified substitute part numbers. Ensure any replacement maintains identical voltage ratings, current capabilities, and package dimensions. Verify lead configuration compatibility, particularly regarding reversed lead variants.

MBRT600150MBRT600150
$99.37
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