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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 40V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：600 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 mA @ 40 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRT60040L is a silicon Schottky diode module manufactured by GeneSiC Semiconductor. It utilizes the Three Tower package architecture, providing an electrically isolated base plate for chassis mounting. The device features a common cathode dual diode configuration with a repetitive peak reverse voltage of 40 V and a maximum average forward current of 300 A. Key electrical parameters include a forward voltage of 880 mV at 300 A and a reverse leakage current of 1 mA at 40 V. The component operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- High surge capability designed for robust power applications
- Three Tower package structure with electrically isolated base plate
- Common cathode dual diode configuration for efficient circuit design
Applications
- DC-DC converter modules
- Free-wheeling rectification in high-current circuits
- Power supply output rectification
Procurement Notes
Verify the specific manufacturer source and document version before procurement. Confirm that the component matches the required Three Tower package dimensions and pinout configuration for your chassis mounting requirements. Ensure thermal interface materials are compatible with the isolated base plate design to maintain optimal heat dissipation performance during operation.
Selection Notes
Select this component when a low forward voltage drop is critical for efficiency in 40 V systems requiring up to 300 A per diode. The common cathode arrangement simplifies wiring compared to separate discrete devices. Consider the thermal resistance characteristics of the Three Tower package to ensure adequate heatsinking solutions are implemented for sustained high-current loads.
Part Context
This part belongs to the MBRT600 series of Schottky diode modules from GeneSiC Semiconductor. The series offers various voltage ratings while maintaining consistent mechanical packaging and thermal management capabilities. The Three Tower design distinguishes these modules by providing superior isolation and mounting flexibility for industrial power electronics applications.
Replacement Considerations
The MBRT60040R is a confirmed substitute variant within the same family, featuring reversed leads for alternative mounting orientations. Verify lead configuration compatibility before substitution. Other series members like MBRT600100 share the package but differ significantly in voltage ratings.
