MBRT60060R

Overview

The GeneSiC Semiconductor MBRT60060R is a silicon power Schottky diode module featuring a three-tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 60 V and supports an average forward current of 600 A per package. The device exhibits a maximum instantaneous forward voltage of 0.80 V at 25 °C and a thermal resistance from junction to case of 0.28 °C/W per leg. Operating temperatures range from -55 °C to +150 °C, with a peak forward surge current capability of 4000 A.

Feature Summary

• High surge current capability for robust transient handling
• Electrically isolated base plate for safe mounting
• Three tower package design for efficient thermal management

Applications

• High-current DC-DC converters
• Free-wheeling rectification in motor drives
• Power supply output rectification

Procurement Notes

Verify the specific datasheet revision and terminal configuration before procurement, as the 'R' suffix indicates reversed leads compared to standard variants. Confirm that the supplier documentation matches the electrical parameters for the 60 V rating. Ensure proper torque specifications are followed during installation to maintain the integrity of the isolated base plate connection.

Selection Notes

Select this component when high average current capacity and low forward voltage drop are required in a thermally efficient package. The isolated base plate simplifies heatsinking without additional insulators. Consider the 0.28 °C/W thermal resistance for heat sink calculations to ensure junction temperature remains within the specified operating range under continuous load conditions.

Part Context

This module belongs to the MBRT600 series of silicon power Schottky diodes, designed for high-performance rectification applications. The series offers various voltage ratings from 45 V to 100 V while maintaining a consistent 600 A current capability. The three-tower package architecture distinguishes it from standard flange-mount diodes by providing enhanced isolation and mechanical stability.

Replacement Considerations

Direct replacements must match the 60 V rating, 600 A current capacity, and three-tower package dimensions. Verify that substitute modules offer comparable thermal resistance and forward voltage characteristics to ensure circuit performance parity.