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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 80V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：80 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：880 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 20 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRT60080 is a silicon power Schottky diode module from the MBRT600 series, manufactured by GeneSiC Semiconductor. It features a Three Tower package with an electrically isolated base plate and screw mount installation style. The device supports a repetitive peak reverse voltage (VRRM) of 80 V and an average forward current (IF(AV)) of 600 A per package. Maximum instantaneous forward voltage is 0.84 V at Tj = 25 °C and IFM = 300 A. Thermal resistance junction-to-case is 0.28 °C/W per leg. Operating temperature range spans -55 °C to +150 °C.
Feature Summary
- High surge capability with 4000 A peak forward surge current per leg
- Electrically isolated base plate for enhanced safety
- Three Tower package design for efficient thermal management
Applications
- DC-DC converters
- Free-wheeling rectification in motor drives
- High-frequency power supplies
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision and manufacturing date codes upon receipt. Ensure proper handling procedures are followed due to the sensitive nature of semiconductor components. Check for any specific storage requirements mentioned in official documentation.
Selection Notes
Select based on required reverse voltage rating and current capacity. Consider thermal resistance values for heat sink design. Verify package compatibility with existing mounting structures. Evaluate operating temperature range against application environment constraints.
Part Context
Part of the MBRT600 series offering various voltage ratings from 45 V to 100 V. Designed for high-current applications requiring robust performance and isolation. Manufactured using silicon technology for reliable operation in demanding power electronics environments.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same series or equivalent specifications from other manufacturers. Ensure electrical and mechanical parameters match before implementation.
FAQ
What is the maximum thermal resistance junction-to-case?
The maximum thermal resistance junction-to-case is 0.28 °C/W per leg.
Is the device ESD sensitive?
No, the device is not ESD sensitive.
What is the peak forward surge current rating?
The peak forward surge current is 4000 A per leg for an 8.3 ms half-sine wave pulse.
