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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 80V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：80 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：880 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 20 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC MBRT60080R is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 80 V and an average forward current of 600 A per package. It utilizes a Three Tower package with an electrically isolated base plate. The maximum instantaneous forward voltage is 0.84 V at Tj = 25 °C and IFM = 300 A, while the maximum thermal resistance from junction to case is 0.28 °C/W per leg. The device supports an operating temperature range from -55 °C to +150 °C and provides a peak forward surge current of 4000 A.
Feature Summary
- High surge capability designed for demanding transient conditions
- Electrically isolated base plate for safe mounting
- Three Tower package configuration for efficient integration
Applications
- High-current DC-DC conversion circuits
- Freewheeling applications in motor drives
- Power factor correction stages
Procurement Notes
Verify the specific electrical ratings against the official datasheet before procurement. Confirm that the terminal configuration matches the system requirements, as the 'R' suffix indicates reversed leads compared to standard variants. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values.
Selection Notes
Select this component when high average current handling and low forward voltage drop are critical. The isolated base plate simplifies heatsinking without additional insulators. Verify that the 80 V reverse voltage rating exceeds the circuit's peak inverse voltage requirements under all operating conditions.
Part Context
This part belongs to the MBRT600 series of silicon power Schottky diodes. The series covers voltage ratings from 45 V to 100 V, sharing common mechanical dimensions and thermal characteristics. The Three Tower package design allows for compact assembly in high-power density applications requiring robust rectification capabilities.
Replacement Considerations
Direct replacements within the same series include MBRT60045R and MBRT60060R for lower voltage ratings, or MBRT600100R for higher voltage tolerance. All share identical current ratings and package footprints.
