MBRTA60030

Description：DIODE MOD SCHOTT 30V 300A 3TOWER
Series：-

SKU:b364fc13e983 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBRTA60030 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 300A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRTA60030

Description：DIODE MOD SCHOTT 30V 300A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：30 V
Current - Average Rectified (Io) (per Diode)：300A
Voltage - Forward (Vf) (Max) @ If：700 mV @ 300 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：1 mA @ 30 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBRTA60030

MBRTA60030

Diode Arrays Overview

The MBRTA60030 is a silicon Schottky rectifier module manufactured by GeneSiC Semiconductor. It features a dual diode configuration in a common cathode arrangement, housed within a Three Tower package designed for chassis mounting. The device supports an average forward current of 300 A per element with a maximum repetitive peak reverse voltage of 30 V. Key electrical characteristics include a maximum forward voltage of 700 mV at the rated current and a non-repetitive peak surge current capability of 4000 A. The unit operates within a temperature range of -55 °C to +150 °C junction temperature.

Diode Arrays Feature Summary

Utilizes a common cathode dual-element architecture for efficient power conversion
Employs a robust Three Tower package structure optimized for high-current thermal management
Features low forward voltage drop characteristics inherent to silicon Schottky technology

Diode Arrays Applications

High-power DC-DC converter modules
Industrial motor drive freewheeling circuits
Uninterruptible power supply (UPS) output rectification

Diode Arrays Procurement Notes

Verify component authenticity through authorized GeneSiC Semiconductor distribution channels or validated distributors. Confirm that the received hardware matches the specific Three Tower package dimensions and pinout configuration required by the target application design. Ensure compliance with RoHS directives as indicated in official product documentation prior to integration into final assemblies.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling capabilities within low voltage environments. The common cathode configuration simplifies circuit topology compared to separate discrete devices. Evaluate thermal resistance requirements against the chassis mounting surface area to ensure reliable operation under continuous load conditions without exceeding the maximum junction temperature limits.

Diode Arrays Part Context

This part belongs to the MBRTA series of high-current Schottky rectifiers from GeneSiC Semiconductor. The series utilizes silicon technology to provide fast switching speeds and low recovery charges. The Three Tower packaging distinguishes these modules from standard tab-mounted alternatives, offering enhanced mechanical stability and thermal dissipation paths for demanding industrial power electronics applications.