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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 35V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：35 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：600 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 mA @ 35 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA60035L is a silicon Schottky rectifier module manufactured by GeneSiC Semiconductor. It features a Twin Tower package configuration with screw mount installation. The device supports a forward current of 600 A and offers reverse voltage ratings typically within the 20 V to 100 V range for this series, specifically rated at 35 V in this model designation. Operating temperatures span from -55 °C to +150 °C junction temperature.
Feature Summary
- Utilizes Silicon Schottky technology for high-efficiency power conversion.
- Designed in a Twin Tower package for robust mechanical mounting.
- Capable of handling high continuous forward currents.
Applications
- Industrial power supply systems
- DC-DC converter modules
- Freewheeling applications in motor drives
Procurement Notes
Verify the specific datasheet revision and exact electrical parameters before procurement, as manufacturing sources may vary. Confirm package compatibility and thermal requirements with your system design. Check for end-of-life notifications or discontinuation status directly with the manufacturer or authorized distributors prior to finalizing orders.
Selection Notes
Select this component when high current capacity and low forward voltage drop are required in a ruggedized package. Ensure the thermal management solution supports the specified maximum junction temperature. Compare specifications against alternative Twin Tower modules if space constraints or specific voltage ratings differ from the standard 35 V rating.
Part Context
This part belongs to the MBR/MCRT/MBRT series of high-current Schottky diodes from GeneSiC Semiconductor. These modules are engineered for demanding power electronics applications requiring reliable performance under high stress conditions. The Twin Tower form factor provides a standardized footprint for easy integration into existing power architectures.
Replacement Considerations
Consult official cross-reference lists for direct replacements. Verify that any substitute maintains identical pinout, package dimensions, and electrical ratings to ensure circuit compatibility without redesign.
