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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 35V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：35 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：700 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 35 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA60035R is a silicon power Schottky rectifier manufactured by GeneSiC Semiconductor. It features a 35V repetitive peak reverse voltage and a 300A average forward current rating. The device utilizes a Three Tower package configuration with screw mount installation style. It operates within a junction temperature range of -55°C to +150°C. The component is classified as a diode module and is currently listed as an obsolete product.
Feature Summary
- High surge capability for robust performance
- Twin Tower/Three Tower package design
- Common Anode configuration
Applications
- Power electronics systems
- DC-DC converters
- Free-wheeling applications
Procurement Notes
Verify the obsolete status and end-of-life notifications before procurement planning. Confirm availability through authorized distributors or surplus channels, as standard production supply is discontinued. Ensure compliance with RoHS requirements if applicable to your specific manufacturing standards. Check for any specific handling instructions related to the Three Tower package during assembly.
Selection Notes
Select this component for high-current applications requiring low forward voltage drop at 35V ratings. Consider the Three Tower package for efficient thermal management in high-power density designs. Verify that the 300A current rating meets the system's continuous and surge requirements. Evaluate the common anode configuration suitability for the specific circuit topology.
Part Context
This part belongs to the GeneSiC MBR series of silicon power Schottky diodes. These devices are designed for high-efficiency rectification in power conversion circuits. The Three Tower package offers a compact solution for high-current applications compared to traditional stud-mounted alternatives.
Replacement Considerations
- MBRT60035CTR
FAQ
What is the package type of the MBRTA60035R?
The MBRTA60035R uses a Three Tower package with a screw mount installation style.
Is the MBRTA60035R still in active production?
No, the MBRTA60035R is listed as an obsolete product.
