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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 40V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：600 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 mA @ 40 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA60040RL is a silicon power Schottky rectifier array manufactured by GeneSiC Semiconductor. It features a common anode configuration with two elements housed in a Three Tower package designed for chassis mounting. The device provides a repetitive peak reverse voltage of 40 V and supports a maximum average forward current of 300 A. Key electrical characteristics include a non-repetitive peak surge forward current capability of 3000 A and a maximum operating junction temperature of 150 °C. The component utilizes lead-free construction compliant with RoHS standards.
Feature Summary
- High surge current capability for robust transient handling
- Electrically isolated base plate within the Three Tower package
- Common anode dual-element configuration for efficient circuit integration
Applications
- Chassis-mounted power rectification systems
- Industrial DC power supply modules
- High-current battery charging applications
Procurement Notes
Verify the specific suffix 'RL' against official GeneSiC documentation to confirm lead orientation and pinout compatibility before integration. Confirm that the Three Tower package dimensions align with the target chassis mounting requirements. Ensure thermal management solutions account for the specified maximum junction temperature limits during operation.
Selection Notes
Select this component when a high-current, low-voltage common anode rectifier is required for chassis-mount applications. The Three Tower package offers electrical isolation benefits suitable for grounded systems. Consider the 300 A average current rating and 3000 A surge capacity to ensure adequate margins for the intended load conditions and startup transients.
Part Context
This part belongs to the MBRTA series of silicon Schottky diodes from GeneSiC Semiconductor. These devices are engineered for high-efficiency power conversion where low forward voltage drop and fast switching speeds are critical. The Three Tower packaging style distinguishes these units from standard through-hole or surface-mount alternatives, targeting heavy-duty industrial environments.
Replacement Considerations
Consult official GeneSiC cross-reference lists for verified substitutes. Generic equivalents may not match the specific Three Tower package geometry or the exact common anode electrical characteristics required for chassis mounting.
