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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 45V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：45 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：600 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 mA @ 45 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA60045L is a silicon Schottky diode module manufactured by GeneSiC Semiconductor. It features a three-tower package configuration with a common anode arrangement for one pair of diodes. The device supports a repetitive peak reverse voltage of 45 V and a forward current of 300 A. The typical forward voltage is 880 mV at 300 A, with a maximum reverse leakage current of 1 mA at 150 V. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- Utilizes a three-tower chassis mount package design for robust mechanical stability
- Employs silicon Schottky technology to ensure high surge capability and low switching losses
- Configured as a common anode array to simplify circuit topology in power applications
Applications
- High-current DC-DC converter circuits
- Freewheeling rectification in motor drive systems
- Power factor correction (PFC) stages
- Industrial power supply units requiring high reliability
Procurement Notes
Verify the specific suffix 'L' against the official GeneSiC datasheet to confirm pinout orientation and lead configuration. Ensure thermal interface materials are compatible with the three-tower chassis mount style. Confirm that the 45 V rating aligns with the system's peak reverse voltage requirements under all operating conditions.
Selection Notes
Select this component when a common anode configuration is required for high-current applications up to 300 A. The three-tower package offers superior heat dissipation compared to standard modules. Consider the 880 mV forward voltage drop for efficiency calculations. Ensure the mounting hardware supports the chassis mount style and thermal management needs.
Part Context
This part belongs to the MBRTA series of high-power Schottky diode arrays. It complements other GeneSiC products like the MBRF40045 and MBR30045CT, offering higher current density in a compact form factor. The series is designed for demanding industrial and automotive power electronics environments.
Replacement Considerations
Direct substitutes include the MBRTA60045RL and MBRTA60045. Verify electrical parameters and pin compatibility before substitution. Cross-reference with the MBR30045CT if a twin tower package is acceptable.
