MBRTA60045R

MBRTA60045R

  • Description:DIODE MOD SCHOTT 45V 300A 3TOWER
  • Series:-

SKU:db6d213d767e Category: Brand:

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Product Detailed Parameters

  • Description:DIODE MOD SCHOTT 45V 300A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:700 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 45 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRTA60045R

Overview

The MBRTA60045R is a silicon super fast recovery rectifier module manufactured by GeneSiC Semiconductor. It features a common anode configuration with a reverse voltage rating of 600 V and a forward current capacity of 300 A. The device exhibits a maximum forward voltage of 1.7 V and a reverse leakage current of 25 uA. Key electrical parameters include a maximum surge current of 2.75 kA, a recovery time of 150 ns, and an operating temperature range from -55 C to +150 C.

Feature Summary

  • Super fast recovery silicon technology for high-speed switching applications
  • Common anode dual element configuration
  • High thermal stability with extended operating temperature range

Applications

  • High-frequency power conversion circuits
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • DC-DC converter stages

Procurement Notes

Verify the specific suffix 'R' against official GeneSiC documentation to confirm lead frame or terminal configuration details. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure screw mounting hardware compatibility with the module package before integration into final assemblies.

Selection Notes

Select this component for designs requiring high current handling with minimal reverse recovery charge. The 150 ns recovery time supports efficient operation in hard-switching topologies. Evaluate thermal management requirements based on the 1.7 V forward voltage drop at full load conditions.

Part Context

This part belongs to the MURTA series of silicon rectifiers from GeneSiC Semiconductor. It serves as a high-power discrete solution within the company's diode portfolio, distinct from their Schottky modules like the MBR series. The product targets industrial and automotive power electronics markets.

Replacement Considerations

Cross-reference with other GeneSiC MURTA series variants for pin-compatible alternatives. Verify that substitute parts match the 600 V / 300 A ratings and 150 ns recovery time specifications.

MBRTA60045RMBRTA60045R

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