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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 60V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：60 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：750 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 60 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA60060 is a silicon Schottky diode module manufactured by GeneSiC Semiconductor. It features a 60V maximum reverse voltage and an average forward current rating of 300A. The device utilizes a Three Tower package configuration with a common cathode arrangement for dual elements. Key electrical parameters include a maximum non-repetitive peak forward surge current of 3000A and a maximum forward voltage drop of 880mV at rated current. The component supports operating junction temperatures up to 150°C.
Feature Summary
- High surge current capability for robust power handling
- Twin tower package design optimized for thermal performance
- Schottky technology ensures fast switching characteristics
Applications
- DC-DC converter circuits
- Free-wheeling rectification in motor drives
- Power supply output stages
Procurement Notes
Verify the obsolete status and lifecycle stage before procurement planning. Confirm that the Three Tower package dimensions match the target PCB footprint. Ensure thermal interface materials are compatible with the screw mount terminals. Validate that the 60V reverse voltage rating provides sufficient margin for the specific application circuit requirements.
Selection Notes
Select this component when high current capacity and low forward voltage drop are required in a compact module form factor. The common cathode configuration simplifies bridgeless PFC or synchronous rectifier designs. Consider the thermal resistance of the package for heatsink selection. Verify compatibility with existing manufacturing processes for screw-mount assembly.
Part Context
This part belongs to the MBRT series of silicon power Schottky diodes from GeneSiC Semiconductor. The series offers various voltage and current ratings within the same mechanical envelope family. The Three Tower package is designed for high-power density applications requiring efficient heat dissipation through the baseplate.
Replacement Considerations
The product status is listed as obsolete. Check for direct pin-compatible replacements within the GeneSiC portfolio or equivalent modules from other manufacturers offering similar 300A, 60V specifications in a Three Tower package.
