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Product Detailed Parameters
- Description：DIODE MOD SCHOT 100V 400A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：400A
- Voltage - Forward (Vf) (Max) @ If：840 mV @ 400 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 100 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA800100 is a silicon power Schottky diode manufactured by GeneSiC Semiconductor. It features a repetitive peak reverse voltage of 100 V and an average forward current rating of 400 A. The device utilizes a three-tower package configuration with a common anode arrangement for two elements. Key electrical characteristics include a maximum forward voltage of 0.75 V at the rated current and a non-repetitive peak forward surge current capability of 3000 A. The component supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- High surge current capability designed for demanding power applications
- Three-tower package structure providing robust mechanical mounting
- Common anode twin element configuration for efficient circuit integration
Applications
- Power rectification in high-current DC circuits
- Freewheeling diodes in switching power supplies
- Reverse polarity protection in industrial power systems
Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm pinout orientation, as variations may exist within the product family. Ensure that the thermal management requirements align with the specified junction temperature limits during operation. Confirm compliance with relevant environmental standards such as RoHS before finalizing procurement specifications.
Selection Notes
Select this component when high average current handling and low forward voltage drop are critical for system efficiency. The three-tower package facilitates direct mounting to heat sinks for effective thermal dissipation. Consider the 3000 A surge rating for applications involving significant inrush currents or transient load conditions.
Part Context
This part belongs to the MBRTA series of silicon power Schottky diodes from GeneSiC Semiconductor. The series offers various voltage ratings ranging from 45 V to 100 V, all sharing similar high-current capabilities and package styles. This specific model represents the 100 V variant within the 400 A current class.
Replacement Considerations
Cross-reference with other models in the MBRTA series for alternative voltage ratings. Verify compatibility with existing thermal interface materials and mounting hardware due to the specific three-tower package geometry.
