MBRTA80080R

Description：DIODE MOD SCHOTT 80V 400A 3TOWER
Series：-

SKU:7ebec6202c4c Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MOD SCHOTT 80V 400A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：400A
Voltage - Forward (Vf) (Max) @ If：840 mV @ 400 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：1 mA @ 80 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

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MBRTA80080R

Overview

The MBRTA80080R is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features an 80 V repetitive reverse voltage rating and a 400 A forward current capacity. The device utilizes a three-tower package configuration with screw mount installation. Operating characteristics include a maximum forward voltage of 0.88 V and a reverse leakage current of 1 uA. The component supports a junction temperature range from -55°C to +150°C, ensuring reliable performance in high-power industrial applications.

Feature Summary

High surge current capability for robust transient handling
Low forward voltage drop for improved efficiency
Three-tower structural design for thermal management

Applications

Industrial motor drives
Power supply rectification
DC-DC converter circuits

Procurement Notes

Verify the specific manufacturer designation during acquisition, as corporate ownership transitions may affect labeling. Confirm RoHS compliance status directly with the supplier. Ensure the three-tower package variant matches the intended PCB or chassis mounting requirements. Validate the electrical parameters against the official datasheet before integration into final designs.

Selection Notes

Select this component when high current handling at low voltage drops is required. The three-tower architecture provides distinct thermal paths compared to twin-tower alternatives. Consider the 80 V rating for compatibility with specific bus voltages. Evaluate the screw mount style against available cooling infrastructure constraints.

Part Context

This module belongs to the MBRTA80 series of silicon power Schottky diodes. The series offers various current ratings within the same package family. The MBRTA80080R represents the 400 A current class within this lineup. It serves as a discrete solution for high-power conversion tasks.