MBT2222ADW1T1G

$0.17

Description：TRANS 2NPN 40V 600MA SC88/SC70
Series：-

SKU:cfc272605286 Category: Bipolar Transistor Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN 40V 600MA SC88/SC70
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN (Dual)
Current - Collector (Ic) (Max)：600mA
Voltage - Collector Emitter Breakdown (Max)：40V
Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
Current - Collector Cutoff (Max)：10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
Power - Max：150mW
Frequency - Transition：300MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-88/SC70-6/SOT-363
Grade：-
Qualification：-

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MBT2222ADW1T1G

Overview

The MBT2222ADW1T1G is a dual NPN bipolar junction transistor manufactured by onsemi in an SC-70-6 (SOT-363) surface-mount package. It features a maximum collector-emitter voltage of 40 V and a collector-base voltage of 75 V, with an emitter-base voltage rating of 6 V. The device supports a continuous collector current of 600 mA and has a power dissipation capacity of 150 mW at 25°C ambient temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 35 and a transition frequency (fT) of 300 MHz. The component operates within a temperature range of -55°C to +150°C and is RoHS compliant.

Feature Summary

Dual NPN configuration integrating two independent transistors in a single compact package for space-constrained designs.
Automotive qualification via AEC-Q101 standard with PPAP capability for the NSV prefix variant.
Lead-free construction that is halogen-free and brominated flame retardant-free.

Applications

General-purpose switching and amplification circuits.
Automotive electronic systems requiring qualified components.
Portable devices utilizing surface-mount technology.

Procurement Notes

Verify the specific ordering suffix when sourcing. The NSV prefix indicates automotive qualification and unique site control requirements distinct from the standard MBT prefix. Confirm package orientation and tape specifications against the manufacturer's BRD8011/D brochure prior to procurement to ensure compatibility with assembly equipment.

Selection Notes

Select this component for applications requiring dual NPN functionality in a minimal footprint. Ensure the design accounts for the 150 mW power dissipation limit at 25°C ambient conditions. Verify that the required current gain meets the minimum hFE of 35 specified in the datasheet for the intended operating point.

Part Context

This part belongs to the MBT2222ADW1 series of general-purpose silicon NPN transistors. It serves as a compact alternative to discrete dual transistor solutions, consolidating two NPN elements into one SOT-363 package to reduce board space and simplify assembly processes.