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The MBT3904DW2T1 is a dual PNP bipolar junction transistor array manufactured by onsemi. It integrates two independent PNP transistors within a compact SOT-363 (SC-88) surface-mount package featuring six terminals. The device supports a maximum continuous collector current of 200 mA and withstands a collector-emitter voltage of 50 V, alongside a collector-base voltage rating of 60 V. Thermal performance includes a maximum power dissipation of 150 mW at ambient conditions, with an operating junction temperature range spanning from -55°C to +150°C.
Verify the specific suffix against official manufacturer documentation to confirm pinout configuration and electrical tolerances. Ensure the procurement source provides valid traceability data and confirms RoHS compliance status prior to acquisition.
Select this component when a dual PNP configuration is required in a minimal footprint. Compare specifications against alternative SC-88 packages to ensure thermal and current ratings align with the target application's operational demands.
This part belongs to the MBT3904 family of dual general-purpose transistors. It serves as the complementary PNP counterpart to the NPN MBT3904DW1T1 variant, offering matched performance characteristics for differential or push-pull circuit topologies.
MBT3904DW2T1G
The maximum collector-emitter voltage (VCEO) is rated at 50 V.
It contains two independent PNP transistors integrated into a single package.
The device operates within a junction temperature range of -55°C to +150°C.