MBT3904DW2T1

MBT3904DW2T1

$0.04
  • Description:TRANS 2NPN 40V 200MA SC88/SC70
  • Series:-

SKU:d67406871da4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 40V 200MA SC88/SC70
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:150mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

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MBT3904DW2T1

Overview

The MBT3904DW2T1 is a dual PNP bipolar junction transistor array manufactured by onsemi. It integrates two independent PNP transistors within a compact SOT-363 (SC-88) surface-mount package featuring six terminals. The device supports a maximum continuous collector current of 200 mA and withstands a collector-emitter voltage of 50 V, alongside a collector-base voltage rating of 60 V. Thermal performance includes a maximum power dissipation of 150 mW at ambient conditions, with an operating junction temperature range spanning from -55°C to +150°C.

Feature Summary

  • Integrates two discrete PNP transistors into a single compact surface-mount footprint to minimize board space requirements.
  • Provides high DC current gain characteristics suitable for general-purpose amplification and switching applications.
  • Features low saturation voltage capabilities to enhance efficiency in low-power circuit designs.

Applications

  • General-purpose signal amplification circuits
  • Low-power switching applications
  • Digital logic interface circuits

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm pinout configuration and electrical tolerances. Ensure the procurement source provides valid traceability data and confirms RoHS compliance status prior to acquisition.

Selection Notes

Select this component when a dual PNP configuration is required in a minimal footprint. Compare specifications against alternative SC-88 packages to ensure thermal and current ratings align with the target application's operational demands.

Part Context

This part belongs to the MBT3904 family of dual general-purpose transistors. It serves as the complementary PNP counterpart to the NPN MBT3904DW1T1 variant, offering matched performance characteristics for differential or push-pull circuit topologies.

Replacement Considerations

MBT3904DW2T1G

FAQ

What is the maximum collector-emitter voltage for the MBT3904DW2T1?

The maximum collector-emitter voltage (VCEO) is rated at 50 V.

Does the MBT3904DW2T1 contain one or two transistors?

It contains two independent PNP transistors integrated into a single package.

What is the recommended operating temperature range?

The device operates within a junction temperature range of -55°C to +150°C.

MBT3904DW2T1MBT3904DW2T1
$0.04
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