MBT3904DW2T1G

MBT3904DW2T1G

$0.04
  • Description:TRANS 2NPN 40V 200MA SC88/SC70
  • Series:-

SKU:885fd2106ccf Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 40V 200MA SC88/SC70
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:150mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

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MBT3904DW2T1G

Overview

The MBT3904DW2T1G is a dual NPN bipolar junction transistor array manufactured by onsemi. It features two isolated transistors housed in a SOT-363 (SC-88) surface-mount package with six leads. The device supports a maximum continuous collector current of 200 mA and a collector-emitter voltage rating of 40 V. Additional electrical specifications include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a transition frequency of 300 MHz. Maximum power dissipation is rated at 150 mW, with an operating temperature range extending up to +150 °C.

Feature Summary

  • Dual NPN configuration within a compact six-lead surface-mount package
  • Isolated transistor architecture for independent channel operation
  • High-speed switching capability suitable for general-purpose amplifier applications

Applications

  • General purpose amplifier circuits
  • Low-power relay switching
  • Dual-color LED drivers
  • Optocoupler driver stages

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact ordering parameters. Ensure compatibility with automated pick-and-place equipment due to the SC-88 package dimensions. Confirm that the intended application does not exceed the 150 mW thermal dissipation limit under worst-case operating conditions.

Selection Notes

Select this component when space-constrained designs require two matched NPN transistors in a single footprint. The SOT-363 package offers a smaller profile compared to discrete SOT-23 alternatives. Consider the 300 MHz transition frequency for high-speed signal processing requirements where low propagation delay is critical.

Part Context

This part belongs to the MBT3904DW series of dual NPN arrays from onsemi. It serves as a compact alternative to using two separate discrete transistors, reducing board space and assembly complexity. The device is commonly utilized in portable electronics and consumer appliances where miniaturization is a priority.

Replacement Considerations

MBT3904DW1T1G: Single-channel variant in the same package; requires circuit redesign for dual functionality.

MBT3904DW2T1GMBT3904DW2T1G
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