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The MBT3904DW2T1G is a dual NPN bipolar junction transistor array manufactured by onsemi. It features two isolated transistors housed in a SOT-363 (SC-88) surface-mount package with six leads. The device supports a maximum continuous collector current of 200 mA and a collector-emitter voltage rating of 40 V. Additional electrical specifications include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a transition frequency of 300 MHz. Maximum power dissipation is rated at 150 mW, with an operating temperature range extending up to +150 °C.
Verify the specific suffix against official manufacturer documentation to confirm exact ordering parameters. Ensure compatibility with automated pick-and-place equipment due to the SC-88 package dimensions. Confirm that the intended application does not exceed the 150 mW thermal dissipation limit under worst-case operating conditions.
Select this component when space-constrained designs require two matched NPN transistors in a single footprint. The SOT-363 package offers a smaller profile compared to discrete SOT-23 alternatives. Consider the 300 MHz transition frequency for high-speed signal processing requirements where low propagation delay is critical.
This part belongs to the MBT3904DW series of dual NPN arrays from onsemi. It serves as a compact alternative to using two separate discrete transistors, reducing board space and assembly complexity. The device is commonly utilized in portable electronics and consumer appliances where miniaturization is a priority.
MBT3904DW1T1G: Single-channel variant in the same package; requires circuit redesign for dual functionality.