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Product Detailed Parameters
- Description：TRANS 2PNP 40V 0.2A SOT363
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT),Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MBT3906DW1T1 is a dual general-purpose PNP bipolar junction transistor (BJT) array housed in an SOT-363 surface-mount package. It integrates two discrete devices to reduce board space and component count. Key electrical parameters include a collector-emitter voltage of -40 Vdc, continuous collector current of -200 mAdc, and total power dissipation of 150 mW at 25°C. The device features a DC current gain ranging from 100 to 300 and a transition frequency of 250 MHz.
Feature Summary
- Integrates two PNP transistors into a single six-leaded SOT-363 package for compact design
- Optimized for low-power surface mount applications requiring minimal board space
- Provides simplified circuit design through reduced component count
Applications
- General purpose amplifier circuits
- Low-power surface mount electronics
- Space-constrained printed circuit board designs
Procurement Notes
Verify the specific ordering suffix when sourcing components. The base part number MBT3906DW1 typically requires a suffix such as T1G for tape-and-reel packaging availability. Confirm RoHS compliance and Pb-free status with the supplier documentation prior to procurement to ensure alignment with manufacturing requirements.
Selection Notes
Select this component for designs prioritizing space efficiency over individual discrete mounting. Ensure the application operates within the 150 mW thermal dissipation limit at ambient temperatures up to 25°C. Verify that the required current gain falls within the specified 100 to 300 range for the intended operating conditions.
Part Context
This device is a spin-off of the popular three-leaded SOT-23/SOT-323 devices, adapted into a dual configuration. It belongs to the MBT3906 series of general-purpose transistors manufactured by onsemi. The SOT-363 package allows for high-density assembly while maintaining performance characteristics similar to standard small-signal transistors.
Replacement Considerations
SMBT3906DW1T1G serves as a qualified automotive-grade alternative with AEC-Q101 qualification and PPAP capability. Other dual PNP arrays in the SOT-363 package may be considered if electrical parameters match the specific circuit requirements.
