MBT3906DW1T2G

MBT3906DW1T2G

  • Description:TRANS 2PNP 40V 0.2A SC88
  • Series:-

SKU:5c094e940467 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2PNP 40V 0.2A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):-
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MBT3906DW1T2G

Overview

The MBT3906DW1T2G is a dual PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a SOT-363-6 surface-mount package and utilizes silicon technology. Key electrical parameters include a maximum DC collector current of 200 mA, a collector-emitter voltage (VCEO) of 40 V, and a collector-base voltage (VCBO) of 40 V. The device has an emitter-base voltage (VEBO) rating of 5 V and a power dissipation (Pd) of 150 mW. It offers a gain-bandwidth product (fT) of 250 MHz and a minimum DC current gain (hFE) of 50. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Dual PNP configuration in a compact SOT-363-6 package for space-efficient designs
  • General-purpose amplifier applications with high current handling capability
  • Automotive qualification via AEC-Q100 standard for reliability

Applications

  • General purpose amplifier circuits
  • Switching applications requiring dual PNP transistors
  • Automotive electronics systems

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm RoHS compliance status through official documentation. Ensure the manufacturer part number corresponds exactly to the requested component specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual PNP transistors in a small outline package. Consider the 200 mA current limit and 40 V voltage ratings for circuit compatibility. Evaluate thermal management requirements given the 150 mW power dissipation constraint in the SOT-363-6 footprint.

Part Context

This part belongs to the SMBT3906/MCT3906 family of dual general-purpose transistors. It serves as a complementary counterpart to NPN variants like the MBT3946DW1T2G. The series provides integrated dual transistor solutions for signal processing and switching tasks.

Replacement Considerations

The SMBT3906DW1T1G is a confirmed substitute part number within the same product family. Verify pinout and electrical parameter equivalence before implementation.

MBT3906DW1T2GMBT3906DW1T2G

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