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The MBT3906DW1T2G is a dual PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a SOT-363-6 surface-mount package and utilizes silicon technology. Key electrical parameters include a maximum DC collector current of 200 mA, a collector-emitter voltage (VCEO) of 40 V, and a collector-base voltage (VCBO) of 40 V. The device has an emitter-base voltage (VEBO) rating of 5 V and a power dissipation (Pd) of 150 mW. It offers a gain-bandwidth product (fT) of 250 MHz and a minimum DC current gain (hFE) of 50. Operating temperatures range from -55°C to +150°C.
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Select this component for designs requiring dual PNP transistors in a small outline package. Consider the 200 mA current limit and 40 V voltage ratings for circuit compatibility. Evaluate thermal management requirements given the 150 mW power dissipation constraint in the SOT-363-6 footprint.
This part belongs to the SMBT3906/MCT3906 family of dual general-purpose transistors. It serves as a complementary counterpart to NPN variants like the MBT3946DW1T2G. The series provides integrated dual transistor solutions for signal processing and switching tasks.
The SMBT3906DW1T1G is a confirmed substitute part number within the same product family. Verify pinout and electrical parameter equivalence before implementation.