MBT3946DW1T1

Overview

The MBT3946DW1T1G is a dual general-purpose bipolar junction transistor (BJT) manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-363-6 surface-mount package. The device supports a maximum DC collector current of 200 mA and operates with a collector-emitter voltage (VCEO) of 40 V. Key electrical parameters include a collector-base voltage (VCBO) ranging from 40 V to 60 V, an emitter-base voltage (VEBO) between 5 V and 6 V, and a power dissipation rating of 150 mW. The gain-bandwidth product (fT) is specified at 300 MHz for the NPN and 250 MHz for the PNP section. The component is qualified under AEC-Q101 standards and functions within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors in a compact SOT-363-6 package to reduce board space and component count.
• Designed for general-purpose amplifier applications with simplified circuit design requirements.
• Qualified for automotive and other applications requiring unique site and control change specifications.

Applications

• Low-power surface mount applications where board space is limited.
• General-purpose amplifier circuits.
• Automotive electronic systems requiring AEC-Q101 qualification.

Procurement Notes

Verify the specific ordering suffix when purchasing, as variations such as T1G or T2G may exist within the same family. Confirm that the required package type matches the SOT-363-6 specification. Ensure that the selected variant meets the necessary AEC-Q101 qualification if the application demands automotive-grade reliability. Cross-reference the manufacturer's datasheet for the most current environmental compliance details regarding RoHS and halogen-free status before finalizing procurement orders.

Selection Notes

Select this component when a dual complementary transistor configuration is needed in a small footprint. The 200 mA current rating and 40 V voltage limits define its operational boundaries for low-power switching and amplification tasks. Consider the 150 mW power dissipation limit for thermal management in dense PCB layouts. The AEC-Q101 qualification makes it suitable for automotive environments, while the standard version serves general industrial needs. Verify the specific hFE and saturation voltage requirements against the datasheet tables for precise circuit matching.

Part Context

This part belongs to the MBT3946DW1T1 series of dual general-purpose transistors. It is a spin-off of popular three-leaded devices, offering a two-in-one solution. The series includes variants like MBT3946DW1T2G, which shares similar electrical characteristics but may differ in packaging or qualification details. The component is part of onsemi's broader portfolio of surface-mount bipolar transistors designed for space-constrained designs.

Replacement Considerations

The MBT3946DW1T2G is listed as an alias for this part number in distributor databases. Other dual BJT packages in the SOT-363 form factor from different manufacturers may serve as functional substitutes if pinouts and electrical ratings are compatible. Always verify the pin configuration and saturation voltages before substituting.