MBT3946DW1T1G

Overview

The MBT3946DW1T1G is a dual general-purpose bipolar junction transistor (BJT) manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-363-6 surface-mount package. The device supports a maximum DC collector current of 200 mA and operates with a collector-emitter voltage (VCEO) of 40 V. Key electrical parameters include a collector-base voltage (VCBO) ranging from 40 V to 60 V, an emitter-base voltage (VEBO) between 5 V and 6 V, and a power dissipation rating of 150 mW. The gain-bandwidth product (fT) is specified at 300 MHz for the NPN section and 250 MHz for the PNP section. Collector-emitter saturation voltages are rated at 200 mV and 250 mV. The component functions across a temperature range of -55°C to +150°C and holds AEC-Q101 qualification.

Feature Summary

• Integrates complementary NPN and PNP transistors in a compact SOT-363-6 package to reduce board space and component count.
• Designed for low-power surface mount applications requiring simplified circuit design.
• Qualified under AEC-Q101 standards with PPAP capability for automotive and high-reliability applications.

Applications

• General purpose amplifier circuits
• Low-power surface mount digital logic interfaces
• Automotive electronic systems requiring AEC-Q101 qualified components

Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure authenticity. Confirm that the received components match the SOT-363-6 package type and meet the required AEC-Q101 qualification standards for the intended application environment.

Selection Notes

Select this component when space-constrained designs require a matched pair of NPN and PNP transistors. Ensure the application current does not exceed 200 mA and the operating voltage remains within the 40 V limit. Consider the 150 mW power dissipation constraint and thermal management requirements for the SOT-363-6 package.

Part Context

This part belongs to the MBT3946DW1T1 series of dual general-purpose transistors. It serves as a spin-off of the popular three-leaded SOT-23/SOT-323 devices, offering a higher density solution by combining two discrete devices into one package while maintaining similar electrical characteristics.

Replacement Considerations

The MBT3946DW1T2G is listed as an alternative part number with identical functional specifications. Other dual BJT packages such as BC858CDXV6 may serve as functional substitutes if pin compatibility and package dimensions allow for mechanical adaptation.