MBT3946DW1T2G

Overview

The MBT3946DW1T2G is a dual complementary bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-363-6 surface-mount package. The device supports a maximum DC collector current of 200 mA and operates with a collector-emitter voltage (VCEO) of 40 V. Key electrical parameters include a collector-base voltage (VCBO) ranging from 40 V to 60 V, an emitter-base voltage (VEBO) between 5 V and 6 V, and a power dissipation rating of 150 mW. The gain-bandwidth product (fT) is specified at 300 MHz for the NPN section and 250 MHz for the PNP section. The component functions reliably across a temperature range of -55°C to +150°C.

Feature Summary

• Dual complementary configuration integrating NPN and PNP transistors in a compact SOT-363-6 package.

Applications

• General-purpose switching applications requiring complementary transistor pairs.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference part numbers such as MBT3946DW1T1G if alternative sourcing is considered.

Selection Notes

Select this component when a small-form-factor dual BJT solution is required for low-power signal processing or switching tasks. The SOT-363-6 package offers space efficiency compared to discrete components. Evaluate thermal management requirements given the 150 mW power dissipation limit. Consider the 200 mA current capability relative to circuit load demands.

Part Context

This part belongs to the MBT3946DW1T1 series of dual complementary BJTs. It shares functional similarities with other small-signal transistor arrays but is distinguished by its specific voltage ratings and package type. The MBT3946DW1T2G serves as a variant within onsemi's general-purpose transistor portfolio, designed for integration into compact electronic circuits.

Replacement Considerations

MBT3946DW1T1G