MC1413BDR2G

$1.07

Description：TRANS 7NPN DARL 50V 500MA 16SOIC
Series：-

SKU:47f57190df32 Category: Bipolar Transistor Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS 7NPN DARL 50V 500MA 16SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：7 NPN Darlington
Current - Collector (Ic) (Max)：500mA
Voltage - Collector Emitter Breakdown (Max)：50V
Vce Saturation (Max) @ Ib, Ic：1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 350mA, 2V
Power - Max：-
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：16-SOIC (0.154", 3.90mm Width)
Supplier Device Package：16-SOIC
Grade：-
Qualification：-

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MC1413BDR2G

Overview

The MC1413BDR2G is a seven-channel NPN Darlington transistor array in a surface-mount SOIC-16 package. It features a maximum continuous collector current of 500 mA and a collector-emitter breakdown voltage of 50 V. The device includes internal suppression diodes to handle inductive loads and utilizes a 2.7 kΩ series input resistor, making it compatible with 5.0 V TTL or CMOS logic systems. Operating temperature range extends from -40°C to +85°C.

Feature Summary

Integrated internal suppression diodes for protection against inductive load transients
High breakdown voltage capability suitable for demanding industrial environments
Built-in 2.7 kΩ input resistors facilitate direct interfacing with standard logic families

Applications

Driving incandescent lamps and lighting circuits
Actuating relays and solenoids
Operating printer hammers and mechanical actuators

Procurement Notes

Verify the specific ordering suffix and package type when sourcing replacements. Confirm that the component meets RoHS compliance requirements if applicable to the design. Check the manufacturer's latest documentation for discontinuation status or alternative part recommendations before finalizing procurement plans.

Selection Notes

Select this component for applications requiring high-voltage switching of inductive loads directly driven by low-current logic signals. Ensure the thermal management strategy accounts for the junction-to-ambient resistance values provided in the datasheet. Verify that the peak inrush currents do not exceed the specified 500 mA limit during operation.

Part Context

This device belongs to the MC1413 family of high-voltage, high-current Darlington arrays manufactured by onsemi. It is designed to replace older through-hole equivalents in modern surface-mount designs. The 'B' designation indicates specific electrical characteristics optimized for 5V logic compatibility.