MC33151DR2G

Overview

The MC33151DR2G is a high-speed dual inverting MOSFET gate driver manufactured by onsemi. It features two independent drivers with a peak output current of 1.5 A. The device operates within a supply voltage range of 6.5 V to 18 V and supports surface mount installation in an SOIC-8 package. Typical rise and fall times are 15 ns, enabling rapid switching for power applications. The component functions within an operating temperature range of 0°C to +70°C.

Feature Summary

• Dual-channel configuration providing independent control for two MOSFETs
• High-speed switching capability with 15 ns typical transition times
• Inverting logic configuration for signal processing
• Robust 1.5 A peak output drive current

Applications

• DC-DC converter circuits
• Motor control systems
• Power supply management modules

Procurement Notes

Verify the specific suffix DR2G corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm that the SOIC-8 footprint matches the target PCB design constraints. Ensure the 0°C to +70°C commercial temperature rating aligns with the operational environment requirements of the final equipment.

Selection Notes

Select this component when dual isolated or referenced gate driving is required for low-side N-channel MOSFETs. The 1.5 A output current is suitable for driving moderate gate charges efficiently. Consider the inverting logic requirement relative to the upstream controller signals. Evaluate the 18 V maximum supply limit against the available system rail voltages.

Part Context

This part belongs to the MC33151 series of high-speed MOSFET gate drivers. It shares functional similarities with other dual drivers but is distinguished by its specific inverting topology and 1.5 A drive strength. The DR2G suffix indicates the reel-based packaging variant distributed by onsemi for volume manufacturing.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.