MC33151VDR2

Overview

The MC33151VDR2 is a dual inverting high-speed MOSFET gate driver manufactured by onsemi. It operates within a supply voltage range of 6.1 V to 18 V and delivers a peak output current of 1.5 A. The device features low propagation delays with rise and fall times of 15 ns, ensuring fast switching performance. It is housed in an 8-pin SOIC surface-mount package and is designed for applications requiring low-current digital inputs.

Feature Summary

• Dual independent channel configuration for simultaneous control
• Inverting logic interface for signal compatibility
• High-speed switching capability with 15 ns transition times
• Robust 1.5 A peak drive current for efficient MOSFET activation

Applications

• Low-side power switching circuits
• Motor control systems
• DC-DC converter topologies

Procurement Notes

Verify the specific suffix 'VDR2G' against official onsemi documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure the selected component matches the required operating temperature range and package dimensions for your PCB layout constraints before finalizing procurement.

Selection Notes

Select this component when inverting logic is required for low-side driving applications. It is suitable for designs needing moderate drive strength (1.5 A) and fast response times. Consider the 8-SOIC package size and the 6.1 V minimum supply voltage requirement during circuit design integration.

Part Context

This part belongs to the MC33151/MC34151 family of high-speed dual MOSFET drivers. These devices are engineered for efficiency in power management applications, utilizing onsemi's BCD technology to provide reliable performance in compact surface-mount packages for industrial and consumer electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.