MC33152DR2

Overview

The MC33152DR2G is a dual non-inverting high-speed MOSFET gate driver manufactured by onsemi. It features two independent channels with 1.5 A totem pole outputs, designed to drive large capacitive loads with high slew rates. The device operates within a supply voltage range of 6.1 V to 18 V and supports CMOS/LSTTL logic inputs with hysteresis. Key electrical parameters include rise and fall times of 15 ns with a 1000 pF load, a maximum power dissipation of 560 mW, and an operating temperature range from -40 °C to +85 °C. It is housed in an SOIC-8 surface-mount package.

Feature Summary

• Dual independent channels providing 1.5 A peak output current for driving power MOSFETs
• High-speed switching capability with 15 ns rise and fall times under standard load conditions
• CMOS and LSTTL logic compatibility with input hysteresis for noise immunity
• Integrated undervoltage lockout with hysteresis to prevent erratic operation at low supply voltages

Applications

• Switching power supplies
• DC-to-DC converters
• Capacitor charge pump voltage doublers and inverters
• Motor controllers

Procurement Notes

Verify the complete part number includes the suffix 'G' (MC33152DR2G) as this indicates RoHS compliance and halide-free manufacturing. Confirm the package type is SOIC-8 and ensure the application requires the commercial grade temperature range (-40 °C to +85 °C). For automotive applications requiring site and change controls, verify if the NCV prefix variant is necessary instead.

Selection Notes

Select this component when high-frequency operation and fast switching speeds are required for driving power MOSFETs. The dual-channel configuration allows for half-bridge or full-bridge topologies. Ensure the input signal levels match the CMOS/LSTTL compatibility requirements. Consider the 1.5 A output current capability against the gate charge requirements of the target MOSFETs to ensure adequate drive strength without excessive heat generation.

Part Context

This device belongs to the MC33152 series of high-speed dual MOSFET drivers. It is functionally similar to the MC34152 but optimized for lower power consumption. The DR2G suffix denotes the SOIC-8 surface-mount package with lead-free and halide-free construction. It serves as a bridge between low-power digital control signals and high-power switching devices.

Replacement Considerations

The NCV33152DR2G is a qualified automotive-grade alternative with identical electrical specifications but includes additional site and change controls. Verify pinout compatibility before substitution. Other generic dual MOSFET drivers may differ in output current capacity or propagation delay characteristics.