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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DIP
- Series:-
- Mfr:onsemi
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:6.1V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.6V
- Current - Peak Output (Source, Sink):1.5A, 1.5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):36ns, 32ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-PDIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MC33152P is a high-speed dual MOSFET driver manufactured by onsemi, designed for efficient switching control in power electronics. It operates within a supply voltage range of 6.1 V to 18 V and delivers peak output currents up to 1.5 A. The device features propagation delays as low as 40 ns with rise and fall times of approximately 36 ns and 32 ns respectively. Packaged in an 8-pin PDIP for through-hole mounting, it supports an operating temperature range from -40°C to +85°C and dissipates up to 1 W of power.
Feature Summary
- Dual-channel architecture providing independent drive signals for two MOSFETs
- High-speed switching capability with nanosecond-level propagation delays
- Robust output stage capable of sourcing and sinking 1.5 A peak current
- Wide supply voltage compatibility supporting standard logic levels
Applications
- DC-DC converter bridge drivers
- Motor control circuits
- Inverter systems
Procurement Notes
Verify the specific suffix 'P' confirms the PDIP package variant when ordering. Confirm that the required operating temperature range aligns with the industrial specification limits. Ensure input signal voltages are compatible with the specified supply voltage window to prevent improper switching behavior or device damage during operation.
Selection Notes
Select this component when dual isolated gate drive signals are required for synchronous rectification or half-bridge topologies. Consider the 1.5 A output current capability against the total gate charge of the target MOSFETs to ensure adequate switching speed. Evaluate the thermal performance within the enclosure to maintain junction temperatures within the specified maximum limit under continuous load conditions.
Part Context
This part belongs to the MC3315x series of high-speed MOSFET drivers from onsemi. It shares functional similarities with the MC33151 but provides dual outputs instead of single. The series is engineered for applications requiring fast transition times and reliable operation in noisy power environments, serving as a critical interface between low-power control logic and high-power switching elements.
Replacement Considerations
Public confirmed substitutes include MC33152DG and MC34152PG.
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