MC33152VDR2

MC33152VDR2

$0.53
  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:bff60c3782bb Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:6.1V ~ 18V
  • Logic Voltage - VIL, VIH:0.8V, 2.6V
  • Current - Peak Output (Source, Sink):1.5A, 1.5A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):36ns, 32ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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MC33152VDR2

Overview

The MC33152VDR2G is a dual non-inverting MOSFET gate driver manufactured by onsemi, designed for high-speed switching applications. It features two independent channels with 1.5 A peak output current capability in a SOIC-8 surface-mount package. The device operates within a supply voltage range of 6.1 V to 18 V and supports CMOS/LSTTL logic inputs. Key electrical parameters include rise and fall times of 15 ns under a 1000 pF load, ensuring rapid signal transitions. It incorporates hysteresis at the input stage and includes undervoltage lockout (UVLO) with hysteresis to prevent erroneous operation during low-voltage conditions. The component is rated for an operating temperature range from -40°C to +85°C and is RoHS compliant.

Feature Summary

  • Dual-channel architecture with 1.5 A push-pull outputs for driving large capacitive loads
  • CMOS and LSTTL compatible inputs with integrated hysteresis for noise immunity
  • Undervoltage lockout mechanism with hysteresis to ensure stable system operation
  • High-speed performance with 15 ns rise and fall times for efficient high-frequency switching

Applications

  • Switching power supplies and DC-DC converters
  • Motor control systems requiring fast MOSFET switching
  • Capacitive charge pumps and inverters
  • Minitype pulsed power supply circuits for laser diodes

Procurement Notes

Verify that the ordering suffix matches 'DR2G' to confirm the SOIC-8 surface-mount package and lead-free status. Confirm the manufacturer is onsemi, as generic listings may lack specific datasheet references. Ensure the part number corresponds to the active MC33152 series rather than obsolete variants. Cross-reference the RoHS compliance status with the latest official documentation to guarantee environmental regulation adherence for modern manufacturing processes.

Selection Notes

Select this component when high-speed switching of power MOSFETs is required with minimal propagation delay. The 1.5 A output current is suitable for driving significant gate capacitance without external buffering. The non-inverting configuration simplifies logic interfacing compared to inverting drivers. Consider the SOIC-8 package for space-constrained PCB layouts where surface-mount technology is preferred over through-hole alternatives like DIP-8.

Part Context

The MC33152VDR2G belongs to the MC33152/MC34152 family of dual high-speed MOSFET drivers. This series is engineered to bridge low-current digital logic signals with high-power analog loads. The 'VDR2G' suffix specifically denotes the tape-and-reel packaging format in an SOIC-8 footprint, distinguishing it from other package options such as DIP-8 or tube-packaged variants within the same functional family.

Replacement Considerations

The MC34152DR2G is a publicly confirmed substitute offering identical functionality and pinout compatibility. Both parts share the same dual-channel architecture and electrical specifications. Verify that the replacement maintains the same SOIC-8 package and RoHS compliance status before integration into existing designs.

MC33152VDR2MC33152VDR2
$0.53
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