ChipApex | Global Electronic Components Supplier
MC33152VDR2G
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC GATE DRVR LOW-SIDE 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：Low-Side
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：6.1V ~ 18V
- Logic Voltage - VIL, VIH：0.8V, 2.6V
- Current - Peak Output (Source, Sink)：1.5A, 1.5A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：36ns, 32ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
Download product information
Overview
The MC33152VDR2G is a dual non-inverting MOSFET gate driver manufactured by onsemi, housed in an 8-SOIC surface-mount package. It operates within a supply voltage range of 6.1 V to 18 V and delivers peak output currents of 1.5 A for both sourcing and sinking. The device features independent channels with typical rise and fall times of 36 ns and 32 ns, respectively. It supports logic input thresholds of 0.8 V (VIL) and 2.6 V (VIH). The component is rated for junction temperatures up to 150°C and complies with RoHS3 standards.
Feature Summary
- Dual-channel architecture providing independent low-side drive capabilities for N-channel MOSFETs
- High peak output current capability of 1.5 A for rapid switching transitions
- Non-inverting logic configuration compatible with standard digital control signals
Applications
- Low-side switching in DC-DC converter topologies
- Motor control circuits requiring high-speed MOSFET actuation
- Power supply systems utilizing parallel MOSFET configurations
Procurement Notes
Verify the specific suffix 'VDR2G' against official manufacturer documentation to confirm the SOIC-8 package and tape-and-reel packaging format. Ensure compatibility with the required operating temperature range and logic voltage levels before integration. Cross-reference the datasheet revision history for any updates regarding pinout or electrical characteristics.
Selection Notes
Select this component when dual independent low-side driving is required with high peak current capability. The 1.5 A output ensures fast switching speeds suitable for high-frequency applications. Verify that the system's logic voltage levels align with the specified 0.8 V and 2.6 V thresholds. Consider the 8-SOIC package constraints for thermal management and PCB layout requirements.
Part Context
This part belongs to the MC33152 series of dual MOSFET gate drivers from onsemi. It is designed specifically for driving N-channel power MOSFETs in low-side configurations. The series offers robust performance for general-purpose power management applications, distinguishing itself through high peak current delivery and compact surface-mount packaging options.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer cross-reference lists for verified alternatives.
