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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 20SOIC
- Series:-
- Mfr:NXP USA Inc.
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:4
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:5.5V ~ 28V
- Logic Voltage - VIL, VIH:0.8V, 2V
- Current - Peak Output (Source, Sink):1A, 1A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):80ns, 80ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package:20-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):55 V
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Overview
The MC33883DWR2 is a four-channel half-bridge gate driver IC manufactured by NXP USA Inc., housed in a 20-SOIC surface-mount package. It provides independent drive for N-channel MOSFETs with peak output currents of 1A source and sink. The device operates on a supply voltage range of 5.5V to 28V, supporting high-side bootstrap voltages up to 55V. Logic thresholds are defined at 0.8V (VIL) and 2V (VIH). Typical rise and fall times are 80ns each. It functions within a junction temperature range of -40°C to 150°C.
Feature Summary
- Four independent half-bridge channels designed for driving N-channel power MOSFETs
- Non-inverting input logic configuration for straightforward control interface
- Integrated bootstrap capability supporting high-side switching up to 55V
- Robust thermal performance rated for junction temperatures up to 150°C
Applications
- Automotive engine management systems
- Transmission and gearbox control units
- Electromagnetic valve actuation circuits
- Industrial motor control applications
Procurement Notes
Verify component authenticity through authorized NXP distributors or certified partners. Confirm the specific suffix 'DWR2' matches the required 20-SOIC package variant. Check RoHS compliance status as indicated in official documentation, noting potential regulatory restrictions. Validate lead times and availability given the product's lifecycle status. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet.
Selection Notes
Select this component when designing systems requiring four isolated half-bridge drivers for N-channel MOSFETs. It is suitable for automotive environments demanding high junction temperature tolerance up to 150°C. Consider the 55V bootstrap voltage limit for high-side applications. Verify that the 1A peak current meets the gate charge requirements of the target power devices. Ensure the 5.5V minimum supply voltage aligns with the system's power architecture.
Part Context
The MC33883 belongs to NXP’s portfolio of gate drivers tailored for power and engine control applications. It complements other NXP solutions like the MC33883HEGR2, which offers similar functionality in different packaging. This series supports complex electromagnetic control tasks in harsh automotive and industrial settings, providing reliable switching for critical power stages.
Replacement Considerations
The MC33883HEGR2 is a documented alternative within the same family, offering comparable half-bridge driver capabilities. Verify pinout compatibility and electrical specifications before substitution. Note that package differences may require PCB layout adjustments.
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