— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 32SOIC
- Series:-
- Mfr:NXP USA Inc.
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Single
- Number of Drivers:1
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:3.3V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):15A, 15A
- Input Type:-
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 125°C (TA)
- Mounting Type:Surface Mount
- Package / Case:32-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package:32-SOIC
- Grade:Automotive
- Qualification:AEC-Q100
- High Side Voltage - Max (Bootstrap):-
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Overview
The MC33GD3100A3EK is an advanced single-channel high-voltage isolated gate driver IC designed for IGBT and SiC MOSFET applications. It features integrated current isolation, low on-resistance drive transistors providing 15A peak source/sink current, and rail-to-rail gate voltage control. The device includes current and temperature sensing to minimize stress during faults, configurable UVLO, and autonomous fault management reported via INTB and SPI interfaces. It supports ISO26262 ASIL D functional safety certification.
Feature Summary
- ISO26262 ASIL D certified functional safety with SafeAssure program support
- Integrated current and temperature sensing for fault condition stress reduction
- SPI programmable interface for flexible configuration and diagnostic reporting
- Autonomous fault management with active Miller clamp and two-stage shutdown
Applications
- Hybrid and full electric vehicle motor drive inverters
- Electric vehicle DC-DC boost circuits
- Charging station power conversion systems
Procurement Notes
Verify the A3 suffix indicates specific pinout or electrical parameter variations compared to the base MC33GD3100 model. Confirm AEC-Q100 automotive qualification status and ISO26262 ASIL D certification documentation availability from NXP official sources before integration into safety-critical designs.
Selection Notes
Select this component for high-reliability automotive traction inverter designs requiring ASIL D compliance. Ensure compatibility with target IGBT or SiC MOSFET gate charge requirements given the 15A drive capability. Validate that the 32-SOIC package fits the thermal and PCB layout constraints of the application.
Part Context
Part of the GD3100 family of advanced gate drivers from NXP USA Inc., targeting electric mobility and industrial power electronics. The series emphasizes high integration to reduce BOM cost and PCB size while maintaining robust protection features for silicon carbide and insulated gate bipolar transistor technologies.
Replacement Considerations
MC33GD3100EK is the base model variant within the same product family.
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