MC33GD3100A3EKR2

MC33GD3100A3EKR2

  • Description:IC GATE DRVR HALF-BRIDGE 32SOIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)

SKU:ade9b42ddc11 Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 32SOIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Driven Configuration:Half-Bridge
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:3.3V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):15A, 15A
  • Input Type:-
  • Rise / Fall Time (Typ):-
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:32-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package:32-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q100
  • High Side Voltage - Max (Bootstrap):-

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MC33GD3100A3EKR2

Overview

The MC33GD3100A3EKR2 is an advanced single-channel high-voltage isolated gate driver IC manufactured by NXP USA Inc., designed for IGBT and SiC power MOSFETs. It features integrated current isolation, low on-resistance drive transistors providing 15A peak source/sink currents, and rail-to-rail gate voltage control. The device includes active Miller clamp, two-level turn-off, and soft turn-off capabilities. It supports PWM and SPI interfaces for programmable dead-time control and diagnostics. Certified to ISO 26262 ASIL D, it offers comprehensive self-test and fault management via INTB and SPI.

Feature Summary

  • ISO 26262 ASIL D functional safety certification with SafeAssure program support
  • Integrated current and temperature sensing to minimize device stress during faults
  • SPI programmability for flexible configuration of dead-time, thresholds, and protection modes
  • Active Miller clamp and two-level/soft turn-off for optimized switching performance

Applications

  • Hybrid and full electric vehicle motor drive inverters
  • Electric vehicle DC-DC boost circuits
  • EV charging station power converters

Procurement Notes

Verify the specific suffix 'A3' against the official datasheet to confirm pinout or electrical parameter variations compared to the standard GD3100. Confirm RoHS compliance status and AEC-Q100 qualification requirements for automotive integration. Check for end-of-life notices as this component family may have replacement recommendations from NXP.

Selection Notes

Select this component for applications requiring ASIL D rated gate driving with integrated diagnostic feedback. Ensure the design utilizes the SPI interface for configuring the precise dead-time and threshold levels required by the target IGBT or SiC module. Verify that the 32-SOIC package thermal characteristics meet the system's dissipation needs under peak load conditions.

Part Context

This part belongs to NXP's GD3100 series of advanced gate drivers. It is specifically engineered for high-reliability automotive traction inverter systems. The series integrates high-voltage isolation and digital communication to reduce bill-of-materials costs and PCB footprint compared to discrete solutions.

Replacement Considerations

Consult NXP documentation for direct replacements such as the MC33GD3100EK if the 'A3' variant is obsolete. Verify compatibility with existing firmware and hardware configurations when substituting.

MC33GD3100A3EKR2MC33GD3100A3EKR2

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