MC33GD3100B3EK

$6.52

Description：IC GATE DRVR HALF-BRIDGE 32SOIC
Series：-
Mfr：NXP USA Inc.
Package：Tube

SKU:3a2aaa8d2c08 Category: Gate Drivers Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：IC GATE DRVR HALF-BRIDGE 32SOIC
Series：-
Mfr：NXP USA Inc.
Package：Tube
Driven Configuration：Half-Bridge
Channel Type：Single
Number of Drivers：1
Gate Type：IGBT, MOSFET (N-Channel)
Voltage - Supply：3.3V
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：15A, 15A
Input Type：-
Rise / Fall Time (Typ)：-
Operating Temperature：-40°C ~ 125°C (TA)
Mounting Type：Surface Mount
Package / Case：32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package：32-SOIC
Grade：Automotive
Qualification：AEC-Q100
High Side Voltage - Max (Bootstrap)：-

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MC33GD3100B3EK

Overview

The MC33GD3100B3EK is an advanced single-channel gate driver for IGBTs and SiC power devices. It features integrated galvanic signal isolation up to 8 kV and a gate drive power stage capable of 15 A peak source and sink current. The device supports PWM and SPI interfaces, operates within a temperature range of −40 °C to 125 °C, and is compatible with 200 V to 1700 V IGBT/SiC modules. It includes programmable active Miller clamp, soft shutdown, two-level turn-off, and segmented drive capabilities.

Feature Summary

Integrated galvanic signal isolation up to 8 kV
15 A peak source and sink gate drive capability
SPI interface for safety monitoring and programmability
ASIL C/D functional safety compliance

Applications

Automotive motor drive inverters
EV DC-DC boost circuits
Charging stations

Procurement Notes

Verify the specific suffix B3EK against official NXP documentation to confirm pinout or configuration differences from standard variants. Confirm AEC-Q100 Grade 1 qualification status for automotive integration. Check RoHS and REACH compliance records prior to procurement. Ensure supply chain authenticity through authorized distributors only.

Selection Notes

Select this component for high-reliability systems requiring direct driving of IGBTs and SiC MOSFETs. The integrated isolation and fault management reduce external component count. Ensure compatibility with negative gate supplies if required. Verify SPI interface availability for system diagnostics and configuration needs.

Part Context

Part of the GD3100 family, designed for high-power density applications. Offers rail-to-rail gate voltage control and low dynamic saturation voltage. Supports power ranges exceeding 125 kW. Designed to minimize IGBT stress during faults through current and temperature sensing.