MC34151DR2

Overview

The MC34151DR2G is a dual inverting MOSFET gate driver manufactured by onsemi, housed in an SOIC-8 surface-mount package. It operates within a supply voltage range of 6.5 V to 18 V and delivers a peak output current of 1.5 A. The device features symmetric rise and fall times of 15 ns, ensuring precise switching control. Designed for industrial applications, it functions reliably across an operating temperature range from 0 °C to +70 °C.

Feature Summary

• Dual-channel configuration with inverting logic for synchronized high-side and low-side drive
• High-speed switching capability with 15 ns rise and fall times
• Robust 1.5 A peak source/sink current for efficient MOSFET gate charging

Applications

• Industrial motor drives
• Power supply circuits
• Inverter systems

Procurement Notes

Verify the complete part number suffix, as 'MC34151DR2' typically denotes the tape-and-reel variant (MC34151DR2G). Confirm RoHS compliance status and ensure the SOIC-8 footprint matches your PCB layout requirements before finalizing procurement.

Selection Notes

Select this component when dual inverting outputs are required for half-bridge or full-bridge topologies. Ensure the application voltage does not exceed 18 V and that the thermal environment remains within the specified 0 °C to +70 °C range for optimal performance.

Part Context

This device belongs to the MC33151/MC34151 series of high-speed MOSFET drivers. It serves as a robust interface between logic-level control signals and power MOSFETs, providing necessary current amplification while maintaining signal integrity in demanding power electronics environments.

Replacement Considerations

The MC34151DR2G is functionally compatible with the MC34152DR2G, though the latter offers non-inverting outputs. Verify logical inversion requirements when substituting.