MCAC140N04YHE3-TP

Single FETs, MOSFETs Overview

The MCAC140N04YHE3-TP is a silicon N-channel enhancement mode MOSFET manufactured by Micro Commercial Components. It utilizes split gate trench power technology and is housed in a DFN5060 package. Key electrical parameters include a drain-source breakdown voltage of 40 V, a continuous drain current of 140 A, and a maximum on-resistance of 2 mΩ at 10 V gate drive. The device supports a gate-source voltage range of ±20 V with a threshold voltage of 3 V. It features a gate charge of 45.7 nC and operates within a temperature range of -55°C to +175°C, with a power dissipation rating of 150 W.

Single FETs, MOSFETs Feature Summary

• Utilizes split gate trench power MOSFET technology for optimized switching performance.
• Designed for industrial and automotive grade applications ensuring reliability.
• Single channel configuration with enhanced thermal stability.

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Automotive power management circuits
• High-efficiency DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix HE3-TP against the manufacturer's latest datasheet to confirm RoHS compliance and halogen-free status. Confirm the package marking and reel specifications match your assembly requirements. Check for any recent PCN updates regarding packaging or material changes before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance and high current capability are required in a compact surface-mount footprint. Ensure the gate drive voltage aligns with the specified 10 V condition for optimal Rds(on) performance. Verify that the thermal design accommodates the 150 W power dissipation rating under intended operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the MCAC series of 40V N-channel MOSFETs from Micro Commercial Components. It shares the DFN5060 package form factor with other variants in the lineup, offering a standardized solution for space-constrained designs requiring robust power handling capabilities in both industrial and automotive environments.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference pinouts and electrical characteristics carefully if considering alternatives from other manufacturers to ensure compatibility with existing circuit designs.