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Product Detailed Parameters
- Description:MOD THYRISTOR/DIODE 1200V Y1-CU
- Series:-
- Mfr:IXYS
- Package:Box
- Structure:Series Connection - SCR/Diode
- Number of SCRs, Diodes:1 SCR, 1 Diode
- Voltage - Off State:1.2 kV
- Current - On State (It (AV)) (Max):250 A
- Current - On State (It (RMS)) (Max):450 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):9000A, 9600A
- Operating Temperature:-40°C ~ 140°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Y1-CU
- Voltage - Gate Trigger (Vgt) (Max):2 V
- Current - Gate Trigger (Igt) (Max):150 mA
- Current - Hold (Ih) (Max):150 mA
- Grade:-
- Qualification:-
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Overview
The MCD255-12IO1 is a silicon thyristor module manufactured by IXYS, designed for high-power industrial applications. It features a rated repetitive off-state voltage (VDRM) of 1200 V and an RMS on-state current (IT(RMS)) of 255 A. The device utilizes a screw-mount installation style within a Y2-DCB package. Key electrical characteristics include a forward voltage drop (VF) of approximately 1.64 V at rated current, a gate trigger current (IGT) of 150 mA, and a maximum holding current (IH) of 200 mA. The component operates within a junction temperature range of -40°C to +125°C.
Feature Summary
- High current capacity with 255 A RMS rating for robust power handling
- Integrated diode configuration in a single phase-leg module
- Durable Y2-DCB packaging suitable for direct heatsink mounting
Applications
- Industrial motor drives and variable frequency drives
- High-power DC-AC inversion systems
- Static power switching in heavy machinery
Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm thermal interface requirements and torque specifications for the screw-mount terminals to ensure reliable mechanical and electrical contact during operation.
Selection Notes
Select this module when a combined thyristor and freewheeling diode solution is required in a compact form factor. Ensure the cooling system can dissipate heat generated by the 1.64 V forward voltage drop at 255 A. Verify that the 1200 V blocking capability exceeds the peak line voltage in the target circuit.
Part Context
This component belongs to IXYS' MCD series of discrete semiconductor modules, which integrate controlled and uncontrolled rectification elements. The series is engineered for medium-to-high power density applications, offering a balance between performance and ease of integration into standard power electronic topologies.
Replacement Considerations
No official substitutes are listed in public documentation. When evaluating alternatives, match the 1200 V rating, 255 A current capacity, and Y2-DCB package dimensions. Verify compatibility of gate trigger parameters and thermal resistance values to ensure seamless integration without redesigning the drive circuit or heatsink.
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